ASTM F980-1992 测量硅半导体器件中电子感应位移故障的快速退火

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【英文标准名称】:GuideforTheMeasurementofRapidAnnealingofNeutron-InducedDisplacementDamageinSiliconSemiconductorDevices
【原文标准名称】:测量硅半导体器件中电子感应位移故障的快速退火
【标准号】:ASTMF980-1992
【标准状态】:作废
【国别】:
【发布日期】:1992
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(Guide)
【标准水平】:()
【中文主题词】:电子工程;损伤;退火;半导体器件;测量
【英文主题词】:Annealing;Defects-semiconductors;Destructivetesting-semiconductors;Displacementdamage;Electricalconductors-semiconductors;Electronichardness;Hardnesstests-radiation(ofsemiconductors);Integratedcircuits;Neutronradiation;Pulsedne
【摘要】:1.1Thisguidedefinestherequirementsandproceduresfortestingsilicondiscretesemiconductordevicesandintegratedcircuitsforrapid-annealingeffectsfromdisplacementdamageresultingfromneutronradiation.Thistestwillproducedegradationoftheelectricalpropertiesoftheirradiateddevicesandshouldbeconsideredadestructivetest.Rapidannealingofdisplacementdamageisusuallyassociatedwithbipolartechnologies.1.2Thisstandarddoesnotpurporttoaddressallofthesafetyproblems,ifany,associatedwithitsuse.Itistheresponsibilityofwhoeverusesthisstandardtoconsultandestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.Specifichazardinformationisgivenin4.2.7.
【中国标准分类号】:L40
【国际标准分类号】:31_080_01
【页数】:5P.;A4
【正文语种】: